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| BB304C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0826-0600 (Previous ADE-208-606D) Rev.6.00 Aug.10.2005 Features * Built in Biasing Circuit; To reduce using parts cost & PC board space. * High gain; (PG = 29 dB typ. at f = 200 MHz) * Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) * Wide supply voltage range; Applicable with 5V to 9V supply voltage. * Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; CMPAK-4(SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is "DW -". 2. BB304C is individual type number of RENESAS BBFET. Rev.6.00 Aug 10, 2005 page 1 of 9 BB304C Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 -0 10 25 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Input capacitance Output capacitance Reverse transfer capacitance Drain current Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) Ciss Coss Crss ID(op) 1 ID(op) 2 Forward transfer admittance |yfs|1 |yfs|2 Power gain PG1 PG2 Noise figure NF1 NF2 Min 12 +10 10 -- -- 0.4 0.5 2.3 0.9 0.003 9 -- 22 -- 24 -- -- -- Typ -- -- -- -- -- -- -- 2.8 1.3 0.02 14 13 27 27 29 29 1.2 1.2 Max -- -- -- +100 100 1.0 1.0 3.6 2.0 0.05 19 -- 34 -- 32 -- 1.9 -- Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +9 V, VG2S = VDS = 0 VG2S = +9 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 A VDS = 5 V, VG1S = 5 V ID = 100 A VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 180 k, f = 1 MHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 180 k VDS = 9 V, VG1 = 9 V, VG2S =6 V RG = 470 k VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 180 k, f = 1 kHz VDS = 9 V, VG1 = 9 V, VG2S =6 V RG = 470 k, f = 1 kHz VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 180 k, f = 200 MHz VDS = 9 V, VG1 = 9 V, VG2S =6 V RG = 470 k, f = 200 MHz VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 180 k, f = 200 MHz VDS = 9 V, VG1 = 9 V, VG2S =6 V RG = 470 k, f = 200 MHz Rev.6.00 Aug 10, 2005 page 2 of 9 BB304C Main Characteristics Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 A ID Drain Source 200MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50) L1 1000p 36p 1000p 47k BBFET L2 1000p 47k Output(50) 10p max 1000p 1SV70 RG 470k RFC 1SV70 1000p VD = VG1 Unit Resistance () Capacitance (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns Rev.6.00 Aug 10, 2005 page 3 of 9 BB304C Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 200 25 27 Typical Output Characteristics VG2S = 6 V VG1 = VDS 0k 150 Drain Current ID (mA) 33 20 0 15 100 10 39 k 0 47 0k 56 k 0 68 k 82 0 50 5 RG 1M = 1.5 M 0 50 100 150 200 0 2 4 6 8 0 k Ambient Temperature Ta (C) Drain to Source Voltage VDS (V) Drain Current vs. Gate2 to Source Voltage 25 VDS = VG1 = 9 V 270 k Drain Current vs. Gate1 Voltage 25 VDS = 9 V RG = 390 k 6V 15 5V 4V 3V 2V 5 VG2S = 1 V 0 2 4 6 8 10 Drain Current ID (mA) 20 20 3 30 k 15 390 k 10 470 k Drain Current ID (mA) 5 560 k 68 0 k 820 k 1M RG = 1.5 M 10 0 1.2 2.4 3.8 4.8 6.0 Gate2 to Source Voltage VG2S (V) Gate1 Voltage VG1 (V) Drain Current vs. Gate1 Voltege 25 VDS = 9 V RG = 470 k 25 Drain Current vs. Gate1 Voltege VDS = 9 V RG = 560 k ID (mA) ID (mA) 20 20 15 Drain Current Drain Current 10 6V 5V 4V 3V 2V 15 10 6V 5V 4V 3V 2V VG2S = 1 V 5 VG2S = 1 V 0 2 4 6 8 10 5 0 2 4 6 8 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Rev.6.00 Aug 10, 2005 page 4 of 9 k 10 10 BB304C Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance |yfs| (mS) 30 VDS = 9 V RG = 390 k 24 f = 1 kHz 18 5V 4V 2V 3V 6V 30 VDS = 9 V RG = 470 k 24 f = 1 kHz 18 5V 4V 3V 2V Forward Transfer Admittance vs. Gate1 Voltage 6V 12 12 6 VG2S = 1 V 0 2 4 6 8 10 6 VG2S = 1 V 0 2 4 6 8 10 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |yfs| (mS) 30 VDS = 9 V RG = 560 k f = 1 kHz 40 Power Gain vs. Gate Resistance 6V 5V 4V 35 Power Gain PG (dB) 24 18 3V 2V 30 25 20 15 12 6 VG2S = 1 V 0 2 4 6 8 10 VDS = 9 V VG1 = 9 V VG2S = 6 V f = 200 MHz 0.2 0.5 1 2 5 10 10 0.1 Gate1 Voltage VG1 (V) Gate Resistance RG (M) Noise Figure vs. Gate Resistance 4 40 VDS = 9 V VG1 = 9 V VG2S = 6 V f = 200 MHz 35 Power Gain vs. Drain Current Noise Figure NF (dB) Power Gain PG (dB) 3 30 25 20 15 10 0 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = variable f = 200 MHz 5 10 15 20 25 30 2 1 0 0.1 0.2 0.5 1 2 5 10 Gate Resistance RG (M) Drain Current ID (mA) Rev.6.00 Aug 10, 2005 page 5 of 9 BB304C Noise Figure vs. Drain Current 4 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = variable f = 200 MHz 30 25 Drain Current vs. Gate Resistance Noise Figure NF (dB) Drain Current ID (mA) 3 20 15 10 5 0 0.1 VDS = 9 V VG1 = 9 V VG2S = 6 V 0.2 0.5 1 2 5 10 2 1 0 5 10 15 20 25 30 Drain Current ID (mA) Gain Reduction vs. Gate2 to Source Voltage 60 50 40 30 20 10 6 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = 470 k f = 200 MHz Gate Resistance RG (M) Input Capacitance vs. Gate2 to Source Voltage Input Capacitance Ciss (pF) Gain Reduction GR (dB) 5 4 3 2 1 0 1 2 3 4 5 6 VDS = 9 V VG1 = 9 V RG = 470 k f = 1 MHz 0 1 2 3 4 5 6 7 Gate2 to Source Voltage VG2S (V) Gate2 to Source Voltage VG2S (V) Rev.6.00 Aug 10, 2005 page 6 of 9 BB304C S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 -60 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 -150 -30 Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 k 50 -- 1000 MHz (50 MHz step) Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 k 50 -- 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -60 -90 -.6 -.8 -1 -1.5 -2 -5 -4 -3 Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 k 50 -- 1000 MHz (50 MHz step) Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 k 50 -- 1000 MHz (50 MHz step) Rev.6.00 Aug 10, 2005 page 7 of 9 BB304C S Parameter (VDS = VG1 = 9V, VG2S = 6V, RG = 470k, Zo = 50) f(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.996 0.993 0.987 0.978 0.972 0.954 0.943 0.925 0.910 0.893 0.880 0.861 0.847 0.829 0.816 0.804 0.791 0.779 0.764 0.753 ANG. -5.3 -10.9 -16.6 -21.9 -27.4 -33.2 -38.2 -43.2 -48.0 -52.5 -57.4 -62.1 -66.1 -69.9 -74.1 -78.2 -82.4 -86.1 -89.5 -92.4 MAG. 2.74 2.73 2.68 2.66 2.63 2.57 2.50 2.43 2.37 2.30 2.24 2.17 2.10 2.02 1.96 1.91 1.85 1.79 1.73 1.68 S21 ANG. 174.0 168.0 162.3 156.3 150.4 144.3 138.7 133.3 128.0 122.6 117.5 112.7 108.1 103.6 99.1 94.8 80.4 86.3 82.2 78.3 MAG. 0.00096 0.00130 0.00203 0.00285 0.00335 0.00385 0.00455 0.00488 0.00526 0.00522 0.00498 0.00512 0.00497 0.00455 0.00418 0.00372 0.00329 0.00275 0.00233 0.00258 S12 ANG. 98.6 84.4 83.6 72.3 69.7 68.3 63.2 55.4 59.8 56.1 53.2 49.1 53.4 53.6 51.6 55.7 62.4 73.0 82.4 105.1 MAG. 0.985 0.991 0.990 0.988 0.985 0.982 0.979 0.975 0.971 0.967 0.962 0.957 0.952 0.947 0.943 0.937 0.933 0.928 0.921 0.918 S22 ANG. -1.9 -4.5 -6.5 -9.4 -11.6 -14.0 -16.2 -18.4 -21.0 -23.0 -25.2 -27.3 -29.4 -31.6 -33.7 -35.8 -38.0 -40.0 -42.1 -44.2 Rev.6.00 Aug 10, 2005 page 8 of 9 BB304C Package Dimensions JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g D e2 b1 B B e A Q c E HE LP L Reference Symbol Dimension in Millimeters A xM A S A b L1 A3 e2 e A2 A l1 yS b b2 c c1 c A-A Section A1 S b1 b3 c1 l1 b5 e1 A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Min 0.8 0 0.8 0.25 0.35 Nom 0.1 1.8 1.15 1.8 0.3 0.1 0.2 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 b4 B-B Section Pattern of terminal position areas 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9 1.5 0.2 Ordering Information Part Name BB304CDW-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Aug 10, 2005 page 9 of 9 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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